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| FDS3601 August 2001 FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 1.3 A, 100 V. RDS(ON) = 480 m @ VGS = 10 V RDS(ON) = 530 m @ VGS = 6 V * Fast switching speed * Low gate charge (3.7nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 20 (Note 1a) Units V V A W 1.3 6 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1.0 0.9 -55 to +175 C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS3601 Device FDS3601 Reel Size 13'' Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS3601 Rev C(W) FDS3601 Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 50 V, ID= 1.3 A Min Typ Max Units 26 1.3 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 80 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V 100 105 10 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 1.3 A ID = 1.3 A VGS = 6 V, VGS = 10 V, ID = 1.3 A, TJ = 125C VGS = 10 V, VDS = 10 V VDS = 5V, ID = 1.3 A 2 2.6 -5 350 376 664 4 V mV/C 480 530 955 m ID(on) gFS 3 3.6 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 50 V, f = 1.0 MHz V GS = 0 V, 153 5 1 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 50 V, VGS = 10 V, ID = 1 A, RGEN = 6 8 4 11 6 16 8 20 12 5 ns ns ns ns nC nC nC VDS = 50 V, VGS = 10 V ID = 1.3 A, 3.7 0.8 1 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 1.3 0.8 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125C/W when mounted on a 2 0.02 in pad of 2 oz copper c) 135C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS3601 Rev C(W) FDS3601 Typical Characteristics 4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 VGS =10V ID, DRAIN CURRENT (A) 6.0V 3 5.0V 4.5V VGS = 4.0V 1.4 4.0V 2 4.5V 1.2 5.0V 6.0V 10V 1 1 0 0 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 1 2 ID, DRAIN CURRENT (A) 3 4 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.25 RDS(ON), ON-RESISTANCE (OHM) 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 o ID = 1.3A VGS = 10V ID = 0.6A 1 TA = 125oC 0.75 0.5 TA = 25oC 0.25 125 150 175 2.5 4 5.5 7 8.5 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 6 VDS = 5V ID, DRAIN CURRENT (A) 4.5 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 TA = 125oC 0.1 3 TA = 125oC 25oC 25oC 0.01 -55oC 0.001 1.5 -55oC 0 1.5 2.5 3.5 4.5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3601 Rev C(W) FDS3601 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 200 ID = 1.3A VDS = 30V 70V 50V CAPACITANCE (pF) 150 CISS f = 1MHz VGS = 0 V 8 6 100 4 50 COSS CRSS 0 2 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 1 1ms 10ms 100ms 1s 10s DC 50 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 100s 40 SINGLE PULSE RJA =135C/W TA = 25C 30 0.1 VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.001 0.1 1 20 0.01 10 10 100 1000 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RJA(t) = r(t) + RJA RJA = 135 C/W P(pk) 0.02 0.01 t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS3601 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 |
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